Project detail

Diagnostika Schottkyho a studenoemisních katod pomocí elektronického šumu

Duration: 1.1.2007 — 31.12.2009

Funding resources

Grantová agentura České republiky - Standardní projekty

On the project

The proposed project is dealing with up-to-date research topics of fluctuation phenomena in Schottky and cold-field emission cathodes. Methodology consists in experimental study of measurable quantities, as the noise voltage or current and theirs spectral density dependence on temperature, light illumination and electric field intensity. The main sources of noise are: 1/f noise, generation recombination noise with its component - RTS noise, shot and thermal noise. The 1/f noise is dominant in ultra low frequency range (mHz region). New experimental results of noise spectral density and the relation to charge carriers mean free path, its mobility, dependence on temperature, light illumination and electric field intensity in this frequency range will be obtained. Achieving these results requires an electron source with the following ideal properties: Small source size, low electron emission energy spread, high brightness (beam current per solid angle), low noise and long-term stability, simple and low-cost operation. The noise spectroscopy in time and frequency domain is one of the promising methods to provide a non-destructive characterisation of semiconductor materials and devices.

Description in English
The proposed project is dealing with up-to-date research topics of fluctuation phenomena in Schottky and cold-field emission cathodes. Methodology consists in experimental study of measurable quantities, as the noise voltage or current and theirs spectral density dependence on temperature, light illumination and electric field intensity. The main sources of noise are: 1/f noise, generation recombination noise with its component - RTS noise, shot and thermal noise. The 1/f noise is dominant in ultra low frequency range (mHz region). New experimental results of noise spectral density and the relation to charge carriers mean free path, its mobility, dependence on temperature, light illumination and electric field intensity in this frequency range will be obtained. Achieving these results requires an electron source with the following ideal properties: Small source size, low electron emission energy spread, high brightness (beam current per solid angle), low noise and long-term stability, simple and low-cost operation. The noise spectroscopy in time and frequency domain is one of the promising methods to provide a non-destructive characterisation of semiconductor materials and devices.

Keywords
noise, spectral density, mobility, afinity

Key words in English
noise, spectral density, mobility, afinity

Mark

GA102/07/0113

Default language

Czech

People responsible

Units

Department of Physics
- responsible department (30.3.2006 - not assigned)
Department of Physics
- beneficiary (30.3.2006 - not assigned)

Results

TOMÁNEK, P.: International Symposium on Optomechatronic Technologies - ISOT 2014. Seattle (05.09.2014)
Detail

DOBIS, P., BRÜSTLOVÁ, J.: New Trends in Physics 2007. Brno (15.11.2007)
Detail

TOMÁNEK, P.: International Symposium on Optomechatronic Technologies - ISOT 2007. Lausanne (08.10.2007)
Detail

HOLCMAN, V.; GRMELA, L.; KNÁPEK, A.; ANDREEV, A.: KR1; Vakuový systém pro měření studenoemisních aktod. UFYZ FEKT VUT v Brně. (prototyp)
Detail

KNÁPEK, A.; HOLCMAN, V.; GRMELA, L.: LE01; Automatizovaný leptací systém. UFYZ FEKT VUT v Brně. URL: http://www.ufyz.feec.vutbr.cz. (prototyp)
Detail

MACKŮ, R.: Spectrum v. 1.3; Software pro měření spektrálních výkonových hustot. Laboratoř UFYZ. URL: http://www.ufyz.feec.vutbr.cz/index.php?lang=1&page=86. (software)
Detail

HOLCMAN, V.; LIEDERMANN, K.; STRÁNÍK, R.: Diel 01; Systému pro měření tekutých dielektrik. UFYZ FEKT VUT v Brně. (funkční vzorek)
Detail

HOLCMAN, V.: SOFT01; Měřicí a vyhodnocovací software "Dielectric 2006". VUT Brno FEKT, UFYZ. URL: http://fyzika.feec.vutbr.cz. (software)
Detail

SADOVSKÝ, P.: s200701; Virtuální laboratoř - měření optoelektronických součástek. Brno. (software)
Detail

HOLCMAN, V. Dielektrická relaxační spektroskopie kompozitních soustav. Brno: 2008. s. 1-32.
Detail

KNÁPEK, A.; GRMELA, L. Fabrication and Noise Diagnostics of Schottky Nanotip Cathodes. Book of Abstracts, IMA 2009 Conference, Athens, October 2009. National and Kapodistrian University of Athens, 2009. p. 53-53.
Detail

SADOVSKÝ, P. Analýza spánkového EEG. Brno: Petr Sadovský, 2007. 120 s.
Detail

GRMELA, L.; TOMÁNEK, P. Near-field study of hot luminescence centers in ZnS:Mn nanocrystals. Brno: VUTIUM Brno, 2007. p. 158-158.
Detail

HRUŠKA, P.; GRMELA, L. Silicon-silicon dioxide nanostructure in electrostatic field. Acta Electrotechnica et Informatica, 2010, vol. 10, no. 3, p. 22-25. ISSN: 1335-8243.
Detail

HOLCMAN, V.; LIEDERMANN, K. New mixing rule of polymer composite systems. WSEAS Transactions on Electronics, 2008, vol. 4, no. 1, p. 181-185. ISSN: 1109-9445.
Detail

ANDREEV, A.; GRMELA, L.; RAŠKA, M.; ŠIKULA, J. Experimental Analysis of Noise in CdTe Radiation Detectors. AIP conference proceedings, 2009, vol. 1129, no. 1, p. 313-317. ISSN: 0094-243X.
Detail

GRMELA, L.; TOMÁNEK, P.; ŠKARVADA, P. Near-field study of hot spot photoluminescence decay in ZnS:Mn nanoparticles. Materials Science Forum, 2007, vol. 2007, no. 567, p. 241-244. ISSN: 0255-5476.
Detail

GRMELA, L.; DOBIS, P.; BRÜSTLOVÁ, J.; TOMÁNEK, P. Optoelectronic noise and photocurrent measurement on GaAs/AlGaAs laser diode with single quantum well. International Journal of Optomechatronics, 2007, vol. 1, no. 1, p. 73-80. ISSN: 1559-9612.
Detail

ANDREEV, A.; GRMELA, L.; ŠIKULA, J.; CHVÁTAL, M.; RAŠKA, M. Bulk Resistance Decay in CdTe. In IEEE EUROCON 2009. St. Petersburg, Russia: Institute of Electrical and Electronics Engineers, St. Petersburg, 2009. p. 1181-1185. ISBN: 978-1-4244-3861-7.
Detail

HRUŠKA, P.; GRMELA, L. EMISSION OF QD IN ELECTROSTATIC FIELDS. In International Conference Technical Computing Prague 2009T - The MathWorks, Inc. & HUMUSOFT s.r.o. & Ústav počítačové a řídicí techniky VŠCHT v Praze. Praha: The MathWorks, Inc. & HUMUSOFT s.r.o. & Ústav počítačové a řídicí techniky VŠCHT v Praze, 2009. p. 39-44. ISBN: 978-80-7080-733-0.
Detail