This project was co-financed with state support of the CR Technological Agency as part of Programu na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)
www.tacr.cz
Research useful for society.

Project detail

RandD of Bulk Semiconductor Material with Wide Bandgap

Duration: 01.01.2018 — 31.12.2020

Funding resources

Technologická agentura ČR - Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)

- whole funder (2017-12-20 - 2020-12-31)

On the project

Description in English
The aim of the project is to develop proprietary bulk crystal growth technology for semiconductor materials with a wide band gap, to develop technology for manufacturing of substrates of 150 mm diameter for semiconductor applications and to develop corresponding methods of crystal and substrates characterization. The world's leading advanced technology will be achieved through effective collaboration between industrial and academic research and development.

Key words in English
Silicon, Carbide, Crystal, Substrate, Semiconductor, PVT

Mark

TH03020005

Default language

Czech

People responsible

Čechal Jan, prof. Ing., Ph.D. - fellow researcher
Mach Jindřich, doc. Ing., Ph.D. - fellow researcher
Voborný Stanislav, Ing., Ph.D. - fellow researcher
Kolíbal Miroslav, doc. Ing., Ph.D. - principal person responsible

Units

Fabrication and Characteris. of Nanostr.
- (2017-05-15 - not assigned)

Results

KOLÍBAL, M.; BÁBOR, P.; LIGMAJER, F.; KOVAŘÍK, M.; POTOČEK, M.: zdroj atomárního vodíku pro SEM; Analýzy povrchů polovodičových materiálů s velkou šířkou zakázaného pásu a kvantitativní analýza dopantů. Purkyňova 123, Brno 61200, budova C, laboratore cistych prostor. URL: http://nano.ceitec.cz/. (ostatní)
Detail

Responsibility: Kolíbal Miroslav, doc. Ing., Ph.D.