Project detail

Model parameters extraction for semiconductor structures

Duration: 01.01.2003 — 31.12.2005

Funding resources

Czech Science Foundation - Standardní projekty

- part funder (2003-01-01 - 2005-12-31)

On the project

Keywords
simulace polovodičových struktur, modelování polovodičových prvků, extrakce parametrů modelu, semiconductor structures simulation, semiconductor devices modeling, model parameters extraction

Key words in English
Neuvedeno.

Mark

GA102/03/0720

Default language

Czech

People responsible

Horák Michal, RNDr., CSc. - fellow researcher
Recman Milan, Ing., CSc. - principal person responsible

Units

Department of Microelectronics
- beneficiary (2002-04-02 - 2005-12-31)

Results

RECMAN, M. HSPICE Statistical Modeling. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. p. 136 ( p.)ISBN: 80-214-2461-3.
Detail

RECMAN, M. HSPICE Model Parameters Extraction. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. p. 143 ( p.)ISBN: 80-214-2461-3.
Detail

RECMAN, M. Diode Model Parameters Extraction. In Socrates Workshop 2004. Intensive Training Programme in Electronic. 2004. p. 55 ( p.)ISBN: 80-214-2819-8.
Detail

RECMAN, M. Early Access Tools - Integration of TCAD Tools and Fabrication. In Electronic Devices and Systems 2003 - Proceedings. Brno: Novotný-Brno, 2003. p. 270 ( p.)ISBN: 80-214-2452-4.
Detail

RECMAN, M. Propojení strukturního a elektrického simulátoru. In 18th International Microworkshop 2004. Sborník. 9. až 11.6.2004 Rožnov. 2004. s. 167 ( s.)ISBN: 80-214-2818-X.
Detail

RECMAN, M. CMOS Circuits Fault Simulation. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. p. 129 ( p.)ISBN: 80-214-2461-3.
Detail

Responsibility: Recman Milan, Ing., CSc.