Project detail
Model parameters extraction for semiconductor structures
Duration: 1.1.2003 — 31.12.2005
Funding resources
Grantová agentura České republiky - Standardní projekty
On the project
Keywords
simulace polovodičových struktur, modelování polovodičových prvků, extrakce parametrů modelu, semiconductor structures simulation, semiconductor devices modeling, model parameters extraction
Key words in English
Neuvedeno.
Mark
GA102/03/0720
Default language
Czech
People responsible
Recman Milan, Ing., CSc. - principal person responsible
Horák Michal, RNDr., CSc. - fellow researcher
Units
Department of Microelectronics
- responsible department (1.1.1989 - not assigned)
Department of Microelectronics
- beneficiary (2.4.2002 - 31.12.2005)
Results
RECMAN, M. Diode Model Parameters Extraction. In Socrates Workshop 2004. Intensive Training Programme in Electronic. 2004. p. 55 ( p.)ISBN: 80-214-2819-8.
Detail
RECMAN, M. Propojení strukturního a elektrického simulátoru. In 18th International Microworkshop 2004. Sborník. 9. až 11.6.2004 Rožnov. 2004. s. 167 ( s.)ISBN: 80-214-2818-X.
Detail
RECMAN, M. Early Access Tools - Integration of TCAD Tools and Fabrication. In Electronic Devices and Systems 2003 - Proceedings. Brno: Novotný-Brno, 2003. p. 270 ( p.)ISBN: 80-214-2452-4.
Detail
RECMAN, M. CMOS Circuits Fault Simulation. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. p. 129 ( p.)ISBN: 80-214-2461-3.
Detail
RECMAN, M. HSPICE Model Parameters Extraction. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. p. 143 ( p.)ISBN: 80-214-2461-3.
Detail
RECMAN, M. HSPICE Statistical Modeling. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. p. 136 ( p.)ISBN: 80-214-2461-3.
Detail
Responsibility: Recman Milan, Ing., CSc.